| PART |
Description |
Maker |
| BGA622 |
Silicon Germanium Wide Band Low Noise Amplifier
|
INFINEON[Infineon Technologies AG]
|
| BGA61208 |
Silicon Germanium Broadband MMIC Amplifier
0 MHz - 2800 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Infineon Technologies AG
|
| CX74004 |
Silicon Germanium Dual-Band LNA/Downconverter RFlC
|
Conexant
|
| AMF-5B-040080-15-25P AMF-4B-040080-15-25P AMF-6B-0 |
4000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
12000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
20000 MHz - 30000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
100 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
8000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
500 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
27500 MHz - 31000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
10 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
2000 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
10 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
1000 MHz - 2000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
100 MHz - 6000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
37000 MHz - 41000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
MITEQ, Inc.
MITEQ INC
|
| KVX2162 KVX2301 KVX2201-23-4 KVX3201A-23-3 KVX3201 |
SURFACE MOUNT VARACTOR DIODES Wide Bandwidth SOT-23 Hyperabrupt TM
L BAND, 50 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
L BAND, 12 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
L BAND, 29 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| AFS3-00101200-35-ULN AFS3-00100600-20-ULN AFS3-020 |
100 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
100 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
2000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
2700 MHz - 3100 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
100 MHz - 500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| EC3H05B 1225 |
NPN Epitaxial Planar Type Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications
NPN Epitaxial Planar Silicon Transistor
From old datasheet system
VHF to UHF Wide-Band Low-Noise Amplifier Applications 甚高频到超高频宽带低噪声放大器的应用
|
Sanyo Semicon Device
Sanyo Electric Co., Ltd.
|
| UPC2709T-E3 UPC2712T-E3 UPC2709T UPC2712T |
2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER 2.5千兆赫硅单片宽带放大
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| 2SC5700 2SC5700WB-TR-E |
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
http://
Renesas Electronics Corporation
|
| 2SC5631 |
Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier
|
Renesas Electronics Corporation
|
| 2SC5828 |
Silicon NPN Epitaxial VHF/UHF Wide band amplifier
|
Hitachi Semiconductor
|
